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Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Low thermal resistance
BYV79E series
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V VF 0.9 V IF(AV) = 14 A IRRM 0.2 A trr 30 ns
k 1
a 2
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV79E series is supplied in the conventional leaded SOD59 (TO220AC) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current
1
CONDITIONS BYV79E Tmb 145C
MIN. -40 -150 150 150 150
MAX. -200 200 200 200 14 28 150 160 0.2 0.2 150 150
UNIT V V V A A A A A A C C
IRRM IRSM Tstg Tj
square wave = 0.5; Tmb 120 C Repetitive peak forward current t = 25 s; = 0.5; Tmb 120 C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 Non-repetitive peak reverse tp = 100 s current Storage temperature Operating junction temperature
1. Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 8 UNIT kV
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air -
BYV79E series
TYP. 60
MAX. 2 -
UNIT K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 14 A; Tj = 150C IF = 14 A IF = 50 A VR = VRWM; Tj = 100 C VR = VRWM IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 0.83 0.95 1.2 0.5 5 6 20 13 1 MAX. 0.90 1.05 1.4 1.3 50 15 30 22 UNIT V V V mA A nC ns ns V
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV79E series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
20
PF / W
Vo = 0.744 V Rs = 0.0112 Ohms
BYV79
Tmb(max) / C 110 D = 1.0
0.5 15 0.2 120
time VF
10
0.1
130
5
I
tp
D=
V VF time
tp T t
140
fr
T
0
0
5
10 15 IF(AV) / A
20
150 25
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.744 V Rs = 0.0112 Ohms
R
15
BYV79
Tmb(max) / C 120 a = 1.57 1.9 2.2
D.U.T. Voltage Pulse Source
10 4
2.8
130
Current shunt
5
140
to 'scope
0 150 15
0
5
IF(AV) / A
10
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV79E series
trr / ns 1000
1000 Qs / nC
IF=10A 100 IF=1A 10
100
IF=10A 5A 2A
10
1
1
10 dIF/dt (A/us)
100
1.0
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 C.
Fig.10. Maximum Qs at Tj = 25 C.
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A 1 IF=2A 0.1
1
0.1
0.01
P D
tp
D=
tp T t
0.01 1 10 -dIF/dt (A/us) 100
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV79E
10s
Fig.8. Maximum Irrm at Tj = 25 C.
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
60 50 40 30 20
IF / A Tj = 150 C Tj = 25 C
typ 10 max 0 0 0.5 1.0 VF / V 1.5 2
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYV79E series
4,5 max
10,3 max
1,3
3,7 2,8
5,9 min
3,0 max not tinned 3,0
15,8 max
13,5 min
1,3 max 1 (2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.12. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYV79E series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 1998
6
Rev 1.200

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